?2015 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA3060ADF rev. 1.0 FGA3060ADF ? 600 v, 30 a field stop trench igbt july 2015 absolute maximum ratings notes: 1. v cc = 400 v, v ge = 15 v, i c = 90 a, r g = 120 ?? inductive load. 2. repetitive rating: pulse width lim ited by max. junction temperature. 3. the purpose of diode is protection for negative voltage. symbol description FGA3060ADF unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v transient gate to emitter voltage ? 30 v i c collector current @ t c = 25 o c6 0 a collector current @ t c = 100 o c3 0 a i lm (1) pulsed collector current @ t c = 25 o c 90 a i cm (2) pulsed collector current 90 a i f (3) diode forward current @ t c = 25 o c3 a diode forward current @ t c = 100 o c1 . 5 a i fm (2) pulsed diode maximum forward current 6 a p d maximum power dissipation @ t c = 25 o c 176 w maximum power dissipation @ t c = 100 o c8 8 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c FGA3060ADF 600 v, 30 a field stop trench igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.8 v(typ.) @ i c = 30 a ? 100% of the parts tested for i lm (1) ? high input impedance ?fast switching ? tighten parameter distribution ? rohs compliant general description this adf igbt series adopted field stop trench 3rd genera- tion igbt which offer extreme low vce(sat) and much faster switching characteristics for out standing efficiency. and this kind of technology is fully optimized to variety pfc (power factor correction) topology ; single boost, multi channel interleaved etc with over 20khz switch ing performance. to3p package provide super low thermal resistance for much wider soa for system stability. applications ? pfc topology for home appliance : single boost , multi chan- nel interleaved etc. g e c to-3pn g c e
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA3060ADF rev. 1.0 thermal characteristics package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter FGA3060ADF unit r t jc (igbt) thermal resistance, junction to case, max. 0.85 o c / w r t jc (diode) thermal resistance, junction to case, max. 5 o c / w r t ja thermal resistance, junction to ambient, max. 40 o c / w part number top mark package packing method reel size tape width quantity FGA3060ADF FGA3060ADF to-3pn tube - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 1 ma 600 - - v ' bv ces ' t j temperature coefficient of breakdown voltage i c = 1 ma, reference to 25 o c -0.52-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 p a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 30 ma, v ce = v ge 4.1 5.6 7.6 v v ce(sat) collector to emitter saturation voltage i c = 30 a , v ge = 15 v -1.82.3v i c = 30 a , v ge = 15 v, t c = 175 o c -2.4- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1mhz - 1072 - pf c oes output capacitance - 36 - pf c res reverse transfer capacitance - 13 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 30 a, r g = 6 : , v ge = 15 v, inductive load, t c = 25 o c -12- ns t r rise time - 19.2 - ns t d(off) turn-off delay time - 42.4 - ns t f fall time - 7.2 - ns e on turn-on switching loss - 960 - uj e off turn-off switching loss - 165 - uj e ts total switching loss - 1125 - uj t d(on) turn-on delay time v cc = 400 v, i c = 30 a, r g = 6 : , v ge = 15 v, inductive load, t c = 175 o c -12.8- ns t r rise time - 27.2 - ns t d(off) turn-off delay time - 46.4 - ns t f fall time - 12.8 - ns e on turn-on switching loss - 1430 - uj e off turn-off switching loss - 310 - uj e ts total switching loss - 1740 - uj
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA3060ADF rev. 1.0 electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400 v, i c = 30 a, v ge = 15 v - 37.4 - nc q ge gate to emitter charge - 7.2 - nc q gc gate to collector charge - 15 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 3 a t c = 25 o c- 1.6 2.3 v t c = 175 o c- 1.4 - e rec reverse recovery energy i f = 3 a, di f /dt = 200 a/ p s, v r = 400 v t c = 175 o c - 29.7 - uj t rr diode reverse recovery time t c = 25 o c- 26 - ns t c = 175 o c - 153 - q rr diode reverse recovery charge t c = 25 o c- 35 - nc t c = 175 o c - 305 -
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA3060ADF rev. 1.0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant current leve l figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 0123456 0 15 30 45 60 75 90 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 15 30 45 60 75 90 20v t c = 175 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 15 30 45 60 75 90 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] -100 -50 0 50 100 150 200 1 2 3 4 60a 30a i c = 15a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitter case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 15a 30a 60a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 60a i c = 15a 30a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA3060ADF rev. 1.0 typical performance characteristics figure 7. capacitance characteristics figure 8. gate charge characteristics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistance figure 11. switching loss vs. figure 12. turn-on characteristics vs. gate resistance collector current 110 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 8 16 24 32 40 0 3 6 9 12 15 common emitter t c = 25 o c 300v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050607080 5 10 100 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ : ] 0 1020304050607080 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] 0 1020304050607080 50 100 1000 5000 common emitter v cc = 400v, v ge = 15v i c = 30a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ : ] 0 153045607590 1 10 100 300 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a]
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA3060ADF rev. 1.0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. switching loss vs. collector current collector current f i g u r e 1 5 . l o a d c u r r e n t v s . f r e q u e n c y f i g u r e 1 6 . s o a c h a r a c t e r i s t i c s f i g u r e 1 7 . f o r w a r d c h a r a c t e r i s t i c s f i g u r e 1 8 . r e v e r s e r e c o v e r y c u r r e n t 0 153045607590 1 10 100 300 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 153045607590 10 100 1000 10000 common emitter v ge = 15v, r g = 6 : t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 1k 10k 100k 1m 0 50 100 150 t c = 75 o c t c = 25 o c t c = 100 o c square wave t j <= 175 o c, d = 0.5, v ce = 400v v ge = 15/0v, r g = 6 : collector current, [a] switching frequency, f[hz] 1 10 100 1000 0.1 1 10 100 dc 1ms 10 ms *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 0123 0.1 1 10 20 t c = 75 o c t c = 25 o c t c = 25 o c t c = 75 o c t c = 175 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 0246810 1 2 3 4 5 t c = 25 o c t c = 175 o c --- di/dt = 100a/ p s di/dt = 200a/ p s di/dt = 100a/ p s di/dt = 200a/ p s reverse recovery currnet, i rr [a] forward current, i f [a]
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA3060ADF rev. 1.0 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21.trans ient thermal impedance of igbt figure 22.transient thermal impedance of diode 0246810 0 100 200 300 400 t c = 25 o c t c = 175 o c - - - di/dt = 200a/ p s di/dt = 100a/ p s reverse recovery time, t rr [ns] forward current, i f [a] 0246810 0 100 200 300 400 500 600 t c = 25 o c t c = 175 o c - - - di/dt = 200a/ p s di/dt = 100a/ p s stored recovery charge, q rr [nc] forward current, i f [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.05 0.1 1 6 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA3060ADF rev. 1.0 mechanical dimensions figure 23. to-3p 3l - 3ld, t03, plastic, eiaj sc-65 package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_tt3p0-003
FGA3060ADF ? 600 v, 30 a field stop trench igbt ?2015 fairchild semiconductor corporation 9 www.fairchildsemi.com FGA3060ADF rev. 1.0 product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? attitudeengine? awinda ? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motiongrid ? mti ? mtx ? mvn ? mwsaver ? optohit? optologic ? optoplanar ? power supply webdesigner? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? xsens? 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